Title :
12th Annual GaAs IC Symposium. Technical Digest 1990 (Cat. No.90CH2889-4)
Abstract :
Presents the cover from the proceedings of this conference.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; Europe; GaAs IC developments; GaAs MMICs; GaAs process technologies; Japan; MMIC; MMIC modeling; US; alternative devices; commercial applications; design techniques; digital LSIs; digital communications; digital packaging; front-ends; manufacturability; measurement; millimeter-wave amplifiers; monolithic microwave integrated circuit; multi-chip modules; multifunction ICs; packaging; power efficiency; semiconductors; static RAMs; testing; wideband MMICs; yield considerations;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175428
