DocumentCode :
2815600
Title :
Compound semiconductor integrated circuits programmes in Europe
Author :
Turner, J.A.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
fYear :
1990
fDate :
7-10 Oct. 1990
Firstpage :
3
Lastpage :
6
Abstract :
Within Europe, collaborative nonmilitary compound semiconductor projects have developed a technological base that is already being used in the large-scale manufacture of GaAs-based products. The author describes these programs and gives examples highlighting the specific achievements of European industry. Current European Economic Community supported microwave programs, as well as national programs of other European countries, are listed. The programs include advanced packaging concepts, large-scale materials growth, advanced device MMICs, and MESFET, HEMT and HBT circuit fabrication.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; packaging; semiconductor growth; Europe; European Economic Community; European industry; GaAs; HBT circuit fabrication; HEMT; MESFET; MMICs; integrated circuits programmes; large-scale manufacture; large-scale materials growth; microwave programs; national programs; nonmilitary compound semiconductor projects; packaging concepts; semiconductors; technological base; Collaboration; Europe; Integrated circuit technology; Large-scale systems; MESFET circuits; MMICs; Manufacturing industries; Microwave devices; Packaging; Semiconductor device manufacture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/GAAS.1990.175432
Filename :
175432
Link To Document :
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