Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Author

Youwen, Zhao ; Fung, S. ; Beling, C.D. ; Xiaoliang, Xu ; Min, Gong ; Niefeng, Sun ; Tongnian, Sun ; Xudong, Chcn ; Ronggui, Zhang ; Silin, Liu

Author_Institution

Dept. of Phys., Hong Kong Univ., Hong Kong

fYear

1998

fDate

11-15 May 1998

Firstpage

92

Lastpage

95

Abstract

Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex V_InH₄ in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed

Keywords

Hall effect; III-V semiconductors; annealing; defect absorption spectra; defect states; hydrogen; impurity absorption spectra; impurity states; impurity-vacancy interactions; indium compounds; infrared spectra; iron; photoconductivity; point defects; Fe-doped liquid encapsulated Czochralski InP; InP:Fe,H; annealed SI InP; annealed undoped liquid encapsulated Czochralski InP; compensation mechanism; defect formation; high temperature annealing; hydrogen indium vacancy complex; infrared absorption spectroscopy; mid gap donor defect; phosphorus antisite; photocurrent spectroscopy; room temperature Hall effect measurement; semi-insulating InP; shallow intrinsic defects; Annealing; Electromagnetic wave absorption; Hall effect; Hydrogen; Indium phosphide; Infrared spectra; Photoconductivity; Spectroscopy; Sun; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712409

Filename

712409