DocumentCode :
2815715
Title :
Structure, Defects, Mechanical and Optical Properties of Hexagonal Semiconductor GaSe1-XSxSingle Crystals at 0
Author :
Atuchin, V.V. ; Andreev, Yu.M. ; Bereznaya, S.A. ; Gavrilova, T.A. ; Lanskii, G.V. ; Malinovskaya, T.D. ; Morozov, A.N. ; Korotchenko, Z.V. ; Pokrovsky, L.D. ; Sarkisov, S.Yu.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk
fYear :
2007
fDate :
20-21 April 2007
Firstpage :
179
Lastpage :
184
Abstract :
Structure, defects, mechanical and optical properties of GaSe1-xSx, 0<x<0.4, matters and single crystals are presented.
Keywords :
III-VI semiconductors; crystal defects; crystal structure; electro-optical effects; gallium compounds; hardness; infrared spectra; reflection high energy electron diffraction; scanning electron microscopy; GaSe1-xSx; Mohs hardness; RHEED; SEM; crystal defects; crystal structure; electro-optical devices; infrared spectra; molecular spectroscopy; semiconductor single crystals; Biomedical optical imaging; Communication system control; Crystals; Frequency conversion; Gases; Mechanical factors; Nonlinear optics; Optical mixing; Optical sensors; Solids; GaSe1-xSx; Semiconductor; hardness; optical damage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
Type :
conf
DOI :
10.1109/SIBCON.2007.371321
Filename :
4233300
Link To Document :
