Title :
Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide
Author :
Kalygina, V.M. ; Ponomarev, I.V. ; Slunko, E.S.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.
Keywords :
III-V semiconductors; chromium; deep levels; gallium arsenide; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; GaAs:Cr; current-voltage characteristics; deep levels; detector structures; epitaxial gallium arsenide; p+-i-n+ structures; radiation detectors; temperature dependence; unipolar injection; Chromium; Communication system control; Current-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Impurities; Light emitting diodes; Radiation detectors; Temperature dependence; Voltage; GaAs; chromium; current-voltage characteristics;
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
DOI :
10.1109/SIBCON.2007.371326
