Title :
10-Gbit/s GaAs MESFET IC´s for ultra high-speed transmission systems
Author :
Togashi, Minoru ; Ohhata, Masanobu ; Murata, Koichi ; Kindoh, Hideaki ; Ino, Masayuki ; Suzuki, Masao ; Yamane, Yasuro
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
10-Gbit/s digital ICs for ultra high-speed transmission systems have been designed and developed. Self-aligned GaAs MESFETs with a gate length of 0.2 mu m are used in these ICs. A 4-bit multiplexer, a 4-bit demultiplexer, and a decision circuit successfully operate at 10 Gbit/s with a single power supply of -3.5 V. The fabrication process and the circuit performance are described.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; gallium arsenide; multiplexing equipment; optical communication equipment; -3.5 V; 0.2 micron; 10 Gbit/s; 4 bit; 4-bit demultiplexer; 4-bit multiplexer; GaAs; circuit performance; decision circuit; fabrication process; gate length; self-aligned MESFET; semiconductors; single power supply; ultra high-speed transmission systems; Assembly; Ceramics; Circuit synthesis; Coupling circuits; FETs; Gallium arsenide; High speed integrated circuits; Logic design; MESFET integrated circuits; Packaging;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175445
