DocumentCode
2815801
Title
The Barrier Height Measurement at the Boundary of Metal Semi-Insulating Gallium Arsenide
Author
Ayzenshtat, G.I. ; Lelekov, M.A. ; Tolbanov, O.P.
Author_Institution
Tomsk State Univ., Tomsk
fYear
2007
fDate
20-21 April 2007
Firstpage
211
Lastpage
214
Abstract
In the paper, the analysis of the volt-ampere characteristics of the structures from semi-insulating gallium arsenide with various contacts is carried out. The method of the Schottky barrier height measurement for the specified material is given. The measured value of the barrier height is 0.79plusmn0.02 eV.
Keywords
III-V semiconductors; Schottky barriers; chromium; gallium arsenide; semiconductor-metal boundaries; Cr-GaAs - Interface; Schottky barrier height measurement; metal-semiinsulator boundary; volt-ampere characteristics; Anodes; Cathodes; Chromium; Communication system control; Detectors; Electrical resistance measurement; Electrons; Gallium arsenide; Gold; Voltage; Semi-insulating gallium arsenide; Shottky barrier;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
1-4244-0346-4
Type
conf
DOI
10.1109/SIBCON.2007.371327
Filename
4233306
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