Title :
The Barrier Height Measurement at the Boundary of Metal Semi-Insulating Gallium Arsenide
Author :
Ayzenshtat, G.I. ; Lelekov, M.A. ; Tolbanov, O.P.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
In the paper, the analysis of the volt-ampere characteristics of the structures from semi-insulating gallium arsenide with various contacts is carried out. The method of the Schottky barrier height measurement for the specified material is given. The measured value of the barrier height is 0.79plusmn0.02 eV.
Keywords :
III-V semiconductors; Schottky barriers; chromium; gallium arsenide; semiconductor-metal boundaries; Cr-GaAs - Interface; Schottky barrier height measurement; metal-semiinsulator boundary; volt-ampere characteristics; Anodes; Cathodes; Chromium; Communication system control; Detectors; Electrical resistance measurement; Electrons; Gallium arsenide; Gold; Voltage; Semi-insulating gallium arsenide; Shottky barrier;
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
DOI :
10.1109/SIBCON.2007.371327
