DocumentCode
2815821
Title
The Undestroying Quality Monitoring Method for the GaAs Detector Structures
Author
Ayzenshtat, G.I. ; Lelekov, M.A. ; Tolbanov, O.P. ; Shapoval, L.G.
Author_Institution
Tomsk State Univ., Tomsk
fYear
2007
fDate
20-21 April 2007
Firstpage
219
Lastpage
222
Abstract
We propose a new undestroying quality monitoring method for the GaAs detector structures that allows to define the charge collection efficiency. Measured life time of nonequilibrium electrons and holes is 15 and 3.3 ns, respectively.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; quality control; semiconductor counters; semiconductor device testing; GaAs - Interface; charge collection efficiency; gallium arsenide detector structures; nonequilibrium electron life time; nonequilibrium hole life time; quality monitoring method; Charge carrier processes; Collimators; Communication system control; Detectors; Gallium arsenide; Glass; Isotopes; Light emitting diodes; Monitoring; Semiconductor films; GaAs detector; charge collection efficiency; life time;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location
Tomsk
Print_ISBN
1-4244-0346-4
Type
conf
DOI
10.1109/SIBCON.2007.371329
Filename
4233308
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