Title :
The Undestroying Quality Monitoring Method for the GaAs Detector Structures
Author :
Ayzenshtat, G.I. ; Lelekov, M.A. ; Tolbanov, O.P. ; Shapoval, L.G.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
We propose a new undestroying quality monitoring method for the GaAs detector structures that allows to define the charge collection efficiency. Measured life time of nonequilibrium electrons and holes is 15 and 3.3 ns, respectively.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; quality control; semiconductor counters; semiconductor device testing; GaAs - Interface; charge collection efficiency; gallium arsenide detector structures; nonequilibrium electron life time; nonequilibrium hole life time; quality monitoring method; Charge carrier processes; Collimators; Communication system control; Detectors; Gallium arsenide; Glass; Isotopes; Light emitting diodes; Monitoring; Semiconductor films; GaAs detector; charge collection efficiency; life time;
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
DOI :
10.1109/SIBCON.2007.371329
