Title :
Subnanosecond Optoelectronic Switch
Author :
Prudaev, I.A. ; Skakunov, M.S. ; Tolbanov, O.P.
Author_Institution :
Tomsk state Univ., Tomsk
Abstract :
New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.
Keywords :
III-V semiconductors; avalanche diodes; electro-optical switches; gallium arsenide; light emitting diodes; GaAs; avalanche GaAs S-diode; light-emitting diode; subnanosecond optoelectronic switch; Communication switching; Communication system control; Current-voltage characteristics; Gallium arsenide; Iron; Light emitting diodes; Production; Switches; Switching circuits; Voltage; Gallium arsenide; current-voltage characteristics; optoelectronic switch; watt-current characteristic;
Conference_Titel :
Control and Communications, 2007. SIBCON '07. Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
1-4244-0346-4
DOI :
10.1109/SIBCON.2007.371332
