Title :
A new experimental method to characterize cyclostationary noise models of bipolar devices
Author :
De Souza, A. A Lisboa ; Nallatamby, J.C. ; Prigent, M. ; Obregon, J.
Author_Institution :
XLIM - Dep. C2S2, Univ. de Limoges, Limoges
Abstract :
This paper presents an experimental method that can be used to determine the cyclostationary properties of the low-frequency noise of bipolar transistors and diodes. The noise is measured while the device works in nonlinear regime, pumped by a low-noise signal source. To measure the noise around carrier (as close as 1 Hz offset from the carrier), bridge circuits are used to balance the pump out. By applying the proposed method to evaluate the low-frequency noise of a SiGe transistor in open collector configuration, it is shown that the 1/f like noise of the device is entirely attributed to fluctuations of its conductance.
Keywords :
1/f noise; Ge-Si alloys; bipolar transistors; bridge circuits; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor diodes; 1/f noise; SiGe; bipolar diodes; bipolar transistors; bridge circuits; cyclostationary noise measurement; nonlinear regime; open collector configuration; Active noise reduction; Bipolar transistors; Bridge circuits; Circuit noise; Fluctuations; Low-frequency noise; Noise measurement; Semiconductor device noise; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Frequency Control Symposium, 2008 IEEE International
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1794-0
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2008.4622981
