DocumentCode :
2815936
Title :
Advanced packaging and low cost manufacturing techniques for GaAs microwave modules
Author :
Niehenke, E.D. ; Sacks, F.E. ; Kline, M.D. ; Simon, A. ; Luce, W.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
fYear :
1990
fDate :
7-10 Oct. 1990
Firstpage :
89
Abstract :
Summary form only given. A new innovative package design using a common RF, DC, and logic carrier with a formed lid structure has been developed for batch processing. Aluminum-silicon composite housings under development offer improved thermal conductivity, lighter weight, lower cost, and the potential of direct attachment of GaAs chips to the housing. Substrate technologies include glass-on-silicon RF substrates which significantly reduce the module part count. A four-to-one reduction in part count and cost was achieved in an RF receiver subassembly using a single substrate and thin-film passive element deposition with this technology. Cofired multilayer ceramic substrates were developed to incorporate logic, power conditions, and RF circuitry. Technologies developed for assemblies include high-precision chip component pick-and-place, automated epoxy chip attachment techniques, and void-free solder attachment using a vacuum system. Vacuum pick-up techniques were developed for the pick-and-place assembly of GaAs MMIC chips to eliminate negative yield factors. Power MMIC chips were effectively soldered with the void-free solder attachment. Highly automated testing techniques have been developed for rapid measurement of pulsed large- and small-signal S-parameters, high dynamic range automated spurious checks, and full S-parameter characterization for all amplitude and phase module settings.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; hybrid integrated circuits; modules; packaging; Al-Si composite housings; GaAs MMIC chips; GaAs microwave modules; RF receiver subassembly; RF substrates; automated epoxy chip attachment techniques; automated testing techniques; batch processing; cofired multilayered ceramic substrates; common RF, DC, and logic carrier; direct attachment of GaAs chips; formed lid structure; full S-parameter characterization; glass-on-Si; high dynamic range automated spurious checks; innovative package design; lighter weight; low cost manufacturing techniques; packaging; precision chip component pick and place; reduction in part count; semiconductors; single substrate; thermal conductivity; thin-film passive element deposition; void-free solder attachment; Costs; Gallium arsenide; MMICs; Manufacturing; Packaging; Pulse measurements; Radio frequency; Substrates; Thermal conductivity; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/GAAS.1990.175456
Filename :
175456
Link To Document :
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