Novel IR Photodetectors Based on GaN/AlGaN HEMT with QWs or QDs in the Barrier

Author

Grinyaev, S.N. ; Karavaev, G.F. ; Zhuravlev, K.S. ; Tronc, P.

Author_Institution

Tomsk State Univ., Tomsk

fYear

2007

fDate

20-21 April 2007

Firstpage

248

Lastpage

254

Abstract

We present results of computation of electron energy levels in GaN/AlGaN QWs and QDs embedded in the barrier of HEMT structures. Wurtzite materials and, in addition 3-d confinement for QDs, cancel polarization limitations regarding the light absorption. Computations are performed with the help of envelope functions for the QWs and of a pseudopotential method for the QDs. Very small dots are considered (with a height of 5 Ga layers) that can be achieved using Volmer-Weber formation mechanism. Electron intersubband optical transitions reach middle- and near-infra-red regions.

Keywords

III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; high electron mobility transistors; infrared detectors; photodetectors; pseudopotential methods; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; GaN-AlGaN - Interface; QD-HEMT structure; Volmer-Weber formation mechanism; conduction electron energy level; electron intersubband optical transitions; envelope function approximation; light absorption; pseudopotential method; quantum dot IR photodetector; quantum well IR photodetector; semiconductor quantum dot; wurtzite material; Aluminum gallium nitride; Charge carrier processes; Communication system control; Electromagnetic wave absorption; Electrons; Energy states; Gallium nitride; HEMTs; Infrared detectors; Photodetectors; GaN; HEMT transistor; IR Photodetector; electron energy level; quantum dot; quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2007. SIBCON '07. Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

1-4244-0346-4

Type

conf

DOI

10.1109/SIBCON.2007.371337

Filename

4233316