DC to 40 GHz MMIC power sensor

Author

Goff, M.E. ; Barratt, C.A.

Author_Institution

Lockheed Sanders Inc., Nashua, NH, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

105

Lastpage

108

Abstract

A GaAs MMIC (monolithic microwave IC) power sensor is presented that has excellent input return loss (>20 dB from DC to 40 GHz), and square law response (<+or-1% deviation over a 55 dB range). This device was created to provide accurate-on-wafer power measurement capability without the insertion-loss and mismatch uncertainty associated with microwave probes. A broadband built-in test equipment (BITE) sensor application is also discussed. The BITE in-line circuit has less than 2.2 dB insertion loss from DC to 25 GHz. While not fast enough to serve as a video detector, the BITE circuit consumes very little GaAs area, and will not infect the RF system with test switching transients or harmonics of the input signal.<>

Keywords

III-V semiconductors; MMIC; built-in self test; electric sensing devices; gallium arsenide; power measurement; 0 to 40 GHz; 2.2 dB; 20 dB; BITE in-line circuit; EHF; GaAs; MMIC power sensor; SHF; accurate-on-wafer power measurement capability; broadband built-in test equipment; input return loss; insertion loss; monolithic microwave IC; square law response; wideband power sensor; Built-in self-test; Circuit testing; Gallium arsenide; MMICs; Microwave devices; Microwave integrated circuits; Microwave sensors; Monolithic integrated circuits; Power measurement; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175461

Filename

175461