Title :
Passive 8-16 GHz MMIC image-reject mixer
Abstract :
A passive 8-16 GHz MMIC image-reject mixer design is presented. The circuit, fabricated on a 4-mil GaAs substrate, is entirely passive and uses planar Schottky barrier diodes as the mixing elements. The topology is a phase-type configuration using two single-balanced mixers and in-phase and quadrature power dividers on-chip, with an off-chip IF quadrature combiner in the 0.1 ro 1.5 GHz band. This approach results in high process yields and excellent circuit uniformity. The design methodology and experimental results are described. A maximum conversion loss of 8 dB, greater than 20-dB image-rejection, and good return loss and port to port isolations were achieved using an 18-dBm LO (local oscillator) drive and an IF of 100 MHz.<>
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; gallium arsenide; mixers (circuits); 8 dB; 8 to 16 GHz; GaAs; IF quadrature combiner; circuit uniformity; conversion loss; design methodology; image-reject mixer; mixing elements; phase-type configuration; planar Schottky barrier diodes; port to port isolations; power dividers; process yields; return loss; single-balanced mixers; Bandwidth; Circuits; Couplers; FETs; Gallium arsenide; Image converters; MMICs; Power dividers; Radio frequency; Schottky diodes;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175464