Title :
The resonance characteristics of solidly mounted resonators with 1/2 λ and 1/4 λ configurations
Author :
Wei, Ching-Liang ; Chen, Ying-Chung ; Cheng, Chien-Chuan ; Wang, Chih-Ming ; Kao, Kuo-Sheng ; Hsieh, Po-Tsung
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
The solidly mounted resonator (SMR) is composed of a piezoelectric AlN thin film sandwiched between two electrodes and a Bragg reflector consisting of alternating high and low acoustic impedance layers of quarter-wavelength thickness. According to the different arrangements of high and low acoustic impedance layers, SMR devices form two resonance modes, i.e. 1/2 lambda and 1/4 lambda mode configurations. The purpose of this study is to compare the resonance characteristics of these two configurations. The thickness of the piezoelectric layer for 1/4 lambda mode configuration is set equal to a half of that for 1/2 lambda mode configuration. Therefore, the piezoelectric thin film for 1/2 lambda mode configuration exhibits better crystallization owing to its film thickness. It leads to a high coupling coefficient, k2, and a wide bandwidth if piezoelectric thin film is fabricated with good crystalline characteristics. As to 1/4 lambda mode configuration with moderate film thickness, it has a better surface smoothness and a lower stress resulting in a slight scattering of the acoustic wave. As a result, the SMR device with 1/4 lambda mode configuration leads to a high quality factor. The return loss outside passband is obviously close to zero for the 1/4 lambda mode configuration.
Keywords :
III-V semiconductors; acoustic impedance; acoustic resonators; acoustic wave scattering; aluminium compounds; bulk acoustic wave devices; crystallisation; mirrors; piezoelectric thin films; wide band gap semiconductors; AlN; Bragg reflector; acoustic impedance layer; acoustic wave scattering; crystallization; film thickness; piezoelectric thin film; quality factor; resonance characteristics; solidly mounted resonator; surface smoothness; thin film bulk acoustic wave resonator; Acoustic devices; Acoustic scattering; Bandwidth; Crystallization; Electrodes; Impedance; Piezoelectric films; Resonance; Stress; Surface acoustic wave devices;
Conference_Titel :
Frequency Control Symposium, 2008 IEEE International
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1794-0
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2008.4622991