DocumentCode :
2816077
Title :
Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors
Author :
Hwang, J.S. ; Lin, H.C. ; Lin, K.I. ; Wang, T.S. ; Lu, Y.T.
fYear :
2005
fDate :
38544
Firstpage :
1338
Lastpage :
1339
Keywords :
Amplitude estimation; Buffer layers; Doping; Etching; Gallium arsenide; Indium compounds; Molecular beam epitaxial growth; Physics; Spectroscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2005. International
Print_ISBN :
0-7803-9240-X
Type :
conf
DOI :
10.1109/IQEC.2005.1561093
Filename :
1561093
Link To Document :
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