Title :
Power switches for automotive ignition
Author_Institution :
SGS-Thomson Microelectronics, Turin, Italy
Abstract :
IGBTs are a new class of high voltage insulated gate bipolar power semiconductors that combine the advantages of MOS gate drive simplicity with the current handling capability of bipolar devices. A brief explanation of the physics and the structure of the device is given and the characteristics which make IGBTs the best choice for automotive ignition power switches are pointed out
Keywords :
automotive electronics; bipolar transistors; electric ignition; insulated gate field effect transistors; power transistors; semiconductor switches; IGBTs; MOS gate drive; automotive ignition; current handling capability; high voltage; ignition power switches; insulated gate bipolar transistors; power semiconductors;
Conference_Titel :
Power Integrated Circuits, IEE Colloquium on
Conference_Location :
London
