Monolithic GaAs W-band pseudomorphic MODFET amplifiers

Author

Sequeira, H.B. ; Duncan, S.W. ; Eskandarian, A. ; Golja, B.A. ; Martel, D.C. ; Southwick, S.B. ; Svensson, S.P. ; Trippe, M.W. ; Tu, D.W. ; Weinreb, S. ; Byer, N.E.

Author_Institution

Martin Marietta Corp., Baltimore, MD, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

161

Lastpage

164

Abstract

A unique realization of a single-stage monolithic GaAs W-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM) MODFET devices is reported. This work reflects a number of significant accomplishments: (1) superior control of MBE to grow the PM layers, (2) well-developed electron-beam 0.1 mu m mushroom-gate technology, (3) reliable physical and equivalent-circuit models of device behavior, (4) layouts that minimize parasitics, and (5) a dual-medium circuit approach consisting of coplanar waveguide (CPW) and microstrip on opposite faces of a 100 mu m-thick GaAs substrate. A peak gain of 4.5 dB at 92 GHz for one of the amplifiers was achieved. The measured gain is in good agreement with the model predictions.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; molecular beam epitaxial growth; 4.5 dB; 92 GHz; GaAs; InGaAs-AlGaAs; MBE; W-band; coplanar waveguide; device behavior; dual-medium circuit; equivalent-circuit models; microstrip; model predictions; mushroom-gate technology; parasitics; peak gain; pseudomorphic MODFET amplifiers; Conducting materials; Coplanar waveguides; Gallium arsenide; HEMTs; Impedance matching; Integrated circuit layout; MODFET circuits; MODFET integrated circuits; Microstrip; Microwave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175476

Filename

175476