Octave band InGaAs HEMT MMIC LNAs to 40 GHz

Design and development of three broadband balanced two-stage low-noise amplifiers (LNAs) are presented and a discrete InGaAs HEMT device noise model is included that implements correlated spectral noise sources with supporting noise parameter data. Three amplifiers that cover the 5-11 GHz, 9-19 GHz and 26-40 GHz frequency bands have been developed, and achieved noise figures of 2.2 dB, 2.5 dB, and 4.75 dB with gains of 23 dB, 19 dB, and 20 dB, respectively, at room temperature. The VSWRs of these LNAs are less than 1.5:1 over their full bands. These two-stage designs offer new capabilities in broadband noise measure and gain. The low-noise fabrication process has achieved 30% RF yield. The combination of a comprehensive device model, process-tolerant circuit design, and proven fabrication process makes the realization of low-cost broadband low-noise amplifiers practical.<>