• DocumentCode
    2816245
  • Title

    First principles band structure calculation and electron transport for strained InAs

  • Author

    Hori, Yasuko ; Miyamoto, Yoshiyuki ; Ando, Yuji ; Sugino, Osamu

  • Author_Institution
    Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    104
  • Lastpage
    107
  • Abstract
    We have theoretically investigated the band structure of InGaAs and strained InAs on (001) InP by employing the pseudopotentials and the local density approximation. We have extracted band parameters and analyzed electron transport by the Monte Carlo method. 26% higher mobility and 16% higher peak velocity are predicted in strained InAs in comparison with unstrained In0.53Ga0.47As
  • Keywords
    III-V semiconductors; Monte Carlo methods; band structure; carrier mobility; density functional theory; electrical conductivity; gallium arsenide; indium compounds; pseudopotential methods; (001) InP; In0.53Ga0.47As; InAs; InGaAs; InP; Monte Carlo method; band parameters; electron transport; first principles band structure calculation; local density approximation; mobility; pseudopotential; strained InAs; velocity; Capacitive sensors; Effective mass; Electrons; Indium gallium arsenide; Indium phosphide; Intrusion detection; Laboratories; Lattices; Sampling methods; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712412
  • Filename
    712412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2816245