62 GHz monolithic multistage indium phosphide-based HEMT amplifier

Author

Sovero, E. ; Deakin, D. ; Ho, W.J. ; Robinson, G.D. ; Farley, C.W. ; Higgins, J.A. ; Chang, M.F.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

169

Lastpage

171

Abstract

The superior performance qualities of indium phosphide-based high electron mobility transistor (HEMT) structures have already been established with discrete devices. In this paper, the first V-band monolithic millimeter-wave ICs made with this material system are reported. Results are presented for a monolithic amplifier with a 9 dB gain at 62.5 GHz. These circuits have all the necessary components for a high-performance amplifier technology including quarter-micron EBL (electron beam lithography) defined gates, MIM (metal insulator metal) capacitors, air-bridge metal crossovers and plated-thru-substrate vias to the ground plane.<>

Keywords

III-V semiconductors; MMIC; electron beam lithography; high electron mobility transistors; indium compounds; microwave amplifiers; 62.5 GHz; 9 dB; InP; MIM; V-band; air-bridge metal crossovers; ground plane; high electron mobility transistor; high-performance amplifier technology; monolithic millimeter-wave ICs; plated-thru-substrate vias; quarter-micron EBL; Electron beams; Gain; HEMTs; Indium; Lithography; MODFETs; Metal-insulator structures; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175478

Filename

175478