Title :
100 GHz high-gain InP MMIC cascode amplifier
Author :
Majidi-Ahy, R. ; Nishimoto, C. ; Riaziat, M. ; Pao, Y.C. ; Weng, S.L. ; Silverman, S. ; Glenn, M. ; Zdasiuk, G. ; Bandy, S. ; Tan, Z.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A high-gain InP MMIC (millimeter-wave IC) cascode amplifier is developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 121 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W-band (75-100 GHz). Lattice-matched InGaAs-InAlAs HEMTs with 0.1 mu m gates are the active devices. Coplanar waveguide (CPW) is the transmission medium for this MMIC with overall chip dimensions of 600 mu m by 500 mu m. Device fabrication, modeling circuit design, and measurement results are reported.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 12 dB; 75 to 100 GHz; 8.0 dB; 80 GHz; HEMTs; InGaAs-InAlAs; InP; MMIC; W-band; active devices; cascode amplifier; coplanar waveguide; maximum bandwidth; maximum-gain bias point; modeling circuit design; overall chip dimensions; Bandwidth; Circuit synthesis; Coplanar waveguides; Fabrication; Gain; HEMTs; Indium phosphide; MMICs; MODFETs; Semiconductor device measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175479
