Title :
A Q-band monolithic AlGaAs/GaAs HEMT CPW downconverter
Author :
Ton, T.N. ; Chen, T.H. ; Dow, G.S. ; Nakano, K. ; Liu, L.C.T. ; Berenz, J.
Author_Institution :
TRW/ESG, Redondo Beach, CA, USA
Abstract :
A fully-integrated HEMT (high electron mobility transistor) MMIC (millimeter-wave IC) downconverter is designed and fabricated using coplanar waveguide (CPW) structure. The CPW design is a high-yield approach because it simplifies the MMIC process by eliminating the yield-limiting backside process. The downconverter circuit consists of a two-stage RF amplifier, a singly balanced HEMT gate diode mixer, and a two-stage IF amplifier. The downconverter receives Q-band RF frequency and downconverts it to a 2-4 GHz IF frequency. The measured conversion gain is 8 to 11 dB. The LO (local oscillator) to IF isolation is better than 30 dB. The chip size is 1.4 *4.0 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; frequency convertors; gallium arsenide; high electron mobility transistors; AlGaAs-GaAs; HEMT; MMIC; Q-band; Q-band RF frequency; chip size; conversion gain; coplanar waveguide; downconverter; high-yield approach; singly balanced HEMT gate diode mixer; two-stage IF amplifier; two-stage RF amplifier; Coplanar waveguides; Diodes; Frequency; HEMTs; MMICs; MODFETs; Millimeter wave integrated circuits; Millimeter wave transistors; Mixers; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175482
