Title :
44 GHz monolithic HEMT downconverter
Author :
Berenz, J. ; LaCon, M. ; Aust, M.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A systematic design, fabrication, and evaluation of a monolithic HEMT (high-electron-mobility transistor) downconverter is presented. The downconverter contains a three-stage low-noise amplifier (LNA), a single balanced mixer, and a two-stage post-amplifier (IF amplifier). The measured results show the downconverter receives signals from 43.5 to 45.5 GHz and converts them down in frequency from 2.3 to 4.3 GHz. The conversion gain is 15 dB with a noise figure of 6.0 dB. This is the best result reported for down converters in this frequency range, and represents the state of the art in monolithic millimeter-wave technology. The downconverter is a key component for many satellite, phased array radar, and electronic warfare (EW) systems.<>
Keywords :
MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; 15 dB; 43.5 to 45.5 GHz; 6.0 dB; conversion gain; electronic warfare; monolithic HEMT downconverter; monolithic millimeter-wave technology; phased array radar; satellite systems; single balanced mixer; three-stage low-noise amplifier; two-stage post-amplifier; Fabrication; Frequency conversion; Frequency measurement; Gain; HEMTs; Low-noise amplifiers; MODFETs; Mixers; Noise figure; Phased arrays;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175483
