Title :
X-band monolithic four-stage LNA with pulse-doped GaAs MESFETs
Author :
Shiga, Nobuo ; Nakajima, Shigeru ; Otobe, Kenji ; Sekiguchi, Takeshi ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki
Author_Institution :
Sumitomo Electric Ind. Ltd., Yokohama, Japan
Abstract :
An X-band monolithic four-stage low-noise amplifier (LNA) with 0.5- mu m-gate pulse-doped GaAs MESFETs has been demonstrated. At 12 GHZ this LNA has a noise figure of 1.67 dB, with 18.5-dB gain, an input VSWR of less than 1.6:1, and an output VSWR of less than 1.8:1. Noise figure, gain, and VSWRs show very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, high yield is obtained, making this device suitable for mass production.<>
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; 0.5 micron; 1.67 dB; 12 GHz; 18.5 dB; GaAs; MMIC; SHF; X-band; bias current insensitivity; low-noise amplifier; mass production; monolithic four-stage LNA; optimized circuit design; performance stability; pulse doped MESFET; Circuit synthesis; Design optimization; FETs; Gain; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Pulse amplifiers; Pulse circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175496
