Highly integrated I-Q converters for 900 MHz applications

Author

O´Sullivan, P. ; Benton, R. ; Podell, A. ; Wachsman, J.

Author_Institution

Pacific Monolithics Inc., Sunnyvale, CA, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

287

Lastpage

290

Abstract

Highly-integrated GaAs monolithic I-Q up and down converters for 900-MHz communication system applications are described. The I-Q upconverter (die size 96 mil*48-mil) accepts quadrature IF signals in the DC-250-MHz frequency range and performs single sideband (SSB) modulation with an LO frequency in the range 750 MHz to 950 MHz. Upconversion gain is 0-dB with a minimum sideband suppression of 25 dB. The I-Q downconverter (die size 96 mil*48 mil) translates an RF signal from a 600-1200-MHz to an IF of DC-250-MHz with a SSB conversion loss of 5 dB. The design and test data are presented on highly integrated GaAs monolithic I-Q converters, fabricated using a standard 1- mu m ion-implanted depletion mode process.<>

Keywords

III-V semiconductors; MMIC; frequency convertors; gallium arsenide; 1 micron; 5 dB; 750 to 950 MHz; 900 MHz; GaAs; I-Q downconverter; I-Q upconverter; SSB conversion loss; SSB modulation; UHF; integrated I-Q converters; ion-implanted depletion mode process; quadrature IF signals; single sideband; Amplitude modulation; FETs; Frequency; Gallium arsenide; Mixers; Radiofrequency amplifiers; Signal processing; Spread spectrum communication; Temperature; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175509

Filename

175509