• DocumentCode
    2816673
  • Title

    Reduction of lattice relaxation in thick strained InAs layer during growth interruption

  • Author

    Nakayama, T. ; Miyamoto, H.

  • Author_Institution
    Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    112
  • Lastpage
    115
  • Abstract
    We found that the relaxation rate of strained InAs during growth interruption in the molecular beam epitaxy (MBE) chamber depends strongly on InAs layer thickness and As4 background pressure. By reducing the As4 background pressure, we successfully prevented lattice relaxation of a 6 nm InAs layer, which is 1.5 times thicker than previously reported critical thickness on an InP substrate
  • Keywords
    III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; stress relaxation; 6 nm; As4 background pressure; InAs; InAs layer thickness; InP; InP substrate; MBE; critical thickness; growth interruption; lattice relaxation; molecular beam epitaxy; relaxation rate; thick strained InAs layer; FETs; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface reconstruction; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712414
  • Filename
    712414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2816673