DocumentCode :
2816673
Title :
Reduction of lattice relaxation in thick strained InAs layer during growth interruption
Author :
Nakayama, T. ; Miyamoto, H.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
112
Lastpage :
115
Abstract :
We found that the relaxation rate of strained InAs during growth interruption in the molecular beam epitaxy (MBE) chamber depends strongly on InAs layer thickness and As4 background pressure. By reducing the As4 background pressure, we successfully prevented lattice relaxation of a 6 nm InAs layer, which is 1.5 times thicker than previously reported critical thickness on an InP substrate
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; stress relaxation; 6 nm; As4 background pressure; InAs; InAs layer thickness; InP; InP substrate; MBE; critical thickness; growth interruption; lattice relaxation; molecular beam epitaxy; relaxation rate; thick strained InAs layer; FETs; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface reconstruction; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712414
Filename :
712414
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2816673
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