DocumentCode
2816790
Title
GaAs MMIC yield modeling
Author
Norris, G.B. ; Barratt, C.A.
Author_Institution
Lockheed Sanders Inc., Nashua, NH, USA
fYear
1990
fDate
7-10 Oct. 1990
Firstpage
317
Lastpage
320
Abstract
The models for chip yield are an important tool in achieving and maintaining affordable GaAs monolithic microwave ICs (MMICs). This includes usage throughout the design and production cycle to (1) maximize designed-in yields (yield optimization), (2), determine yield limiting process steps (process refinement), (3) monitor fabrication yields (learning curve), and (4) accurately project actual projection costs of new designs. The basis is developed for an analysis yield model useful in these areas. Experimental yield data from on-wafer DC/RF testing are used together with analytical techniques developed for silicon VLSI to determine the statistical properties of MMIC yield. These properties are used to define an appropriate formulation for the model, which relates observed yields of MMICs to their associated component content. Applications of the model to the above areas are discussed.<>
Keywords
III-V semiconductors; MMIC; gallium arsenide; statistical analysis; GaAs; MMIC; chip yield; component content; fabrication yields; on-wafer DC/RF testing; statistical properties; yield limiting process; yield modeling; Cost function; Design optimization; Fabrication; Gallium arsenide; MMICs; Monitoring; Production; Radio frequency; Refining; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/GAAS.1990.175518
Filename
175518
Link To Document