• DocumentCode
    2816790
  • Title

    GaAs MMIC yield modeling

  • Author

    Norris, G.B. ; Barratt, C.A.

  • Author_Institution
    Lockheed Sanders Inc., Nashua, NH, USA
  • fYear
    1990
  • fDate
    7-10 Oct. 1990
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    The models for chip yield are an important tool in achieving and maintaining affordable GaAs monolithic microwave ICs (MMICs). This includes usage throughout the design and production cycle to (1) maximize designed-in yields (yield optimization), (2), determine yield limiting process steps (process refinement), (3) monitor fabrication yields (learning curve), and (4) accurately project actual projection costs of new designs. The basis is developed for an analysis yield model useful in these areas. Experimental yield data from on-wafer DC/RF testing are used together with analytical techniques developed for silicon VLSI to determine the statistical properties of MMIC yield. These properties are used to define an appropriate formulation for the model, which relates observed yields of MMICs to their associated component content. Applications of the model to the above areas are discussed.<>
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; statistical analysis; GaAs; MMIC; chip yield; component content; fabrication yields; on-wafer DC/RF testing; statistical properties; yield limiting process; yield modeling; Cost function; Design optimization; Fabrication; Gallium arsenide; MMICs; Monitoring; Production; Radio frequency; Refining; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/GAAS.1990.175518
  • Filename
    175518