Effects of semi-insulating gallium arsenide substrate properties on silicon implanted active layer

Author

Orito, F. ; Watanabe, K. ; Yamada, Y. ; Yamamoto, O. ; Yajima, F.

Author_Institution

Mitsubishi Kasei Corp., Ushiku, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

321

Lastpage

324

Abstract

Effects of carbon, boron, and EL2 concentrations in undoped semi-insulating GaAs crystal on silicon-implanted active layers are quantitatively examined. The mechanisms for these effects are investigated. Reducing carbon and boron concentrations, growing crystal from a near-stoichiometric melt, and boule annealing all improve the uniformity in silicon-implanted active layers formed on undoped semi-insulating GaAs substrates. Seed-to-tail uniformity within boule and boule-to-boule uniformity are also improved. These undoped semi-insulating GaAs substrates are promising for IC applications. The reliable supply of GaAs substrates is moving high-performance GaAs devices into manufacturing.<>

Keywords

III-V semiconductors; annealing; gallium arsenide; integrated circuit technology; monolithic integrated circuits; silicon; GaAs; GaAs:Si; IC applications; active layers; boule annealing; boule-to-boule uniformity; near-stoichiometric melt; uniformity; Annealing; Boron; Crystalline materials; Crystals; Digital integrated circuits; Equations; Gallium arsenide; Impurities; Plasma temperature; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175519

Filename

175519