• DocumentCode
    2816855
  • Title

    Energy-efficient redox-based non-volatile memory devices and logic circuits

  • Author

    Waser, Rainer ; Rana, Vijay ; Menzel, Stephan ; Linn, Eike

  • Author_Institution
    PGI-7 & JARA-FIT, Forschungszentrum Julich, Julich, Germany
  • fYear
    2013
  • fDate
    28-29 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.
  • Keywords
    DRAM chips; MRAM devices; energy conservation; flash memories; logic circuits; memristors; oxidation; reduction (chemical); DRAM; ReRAM; energy-efficient redox; flash memory; logic circuit; memristive element; nanoionic memory; neuromorphic concept; nonvolatile memory device; redox-based resistive switching memory; Electronic countermeasures; Energy efficiency; Ions; Kinetic theory; Nanoscale devices; Nonvolatile memory; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
  • Conference_Location
    Berkeley, CA
  • Type

    conf

  • DOI
    10.1109/E3S.2013.6705863
  • Filename
    6705863
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2816855