• DocumentCode
    2817224
  • Title

    Nanoelectromechanical switching devices: Scaling toward ultimate energy efficiency and longevity

  • Author

    Feng, Philip X.-L

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2013
  • fDate
    28-29 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The active search for candidates of an ideal switching device for low-voltage logic and ultralow-power applications has stimulated focused explorations of contact-mode switches (relays) based on micro/nanoelectromechanical systems (MEMS/NEMS) [1-7]. This has been driven by the fundamental advantages that mechanical devices offer, such as ideally abrupt switching with zero off-state leakage, suitable for harsh and extreme environments, and very small footprints (e.g., particularly with NEMS). In pursuing and realizing these advantages, however, significant challenges still remain today: (i) All the high-performance mechanical switches recently demonstrated are still in the MEMS domain [2-5] and are orders of magnitude larger in size or volume (>103 to 104) than the nanoscale devices presented in this work. (ii) Most truly nanoscale contact-mode NEMS switches known to date (often based on various nanowires, cantilevers and nanotubes) still suffer from very short lifetimes.nanoscale contact-mode NEMS switches
  • Keywords
    nanoelectromechanical devices; switches; contact-mode switches; energy efficiency; longevity; low-voltage logic applications; nanoelectromechanical switching devices; ultralow-power applications; Logic gates; Nanoelectromechanical systems; Nanoscale devices; Silicon carbide; Switches; Switching circuits; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
  • Conference_Location
    Berkeley, CA
  • Type

    conf

  • DOI
    10.1109/E3S.2013.6705881
  • Filename
    6705881