Suppression of carrier accumulation at the epilayer/substrate interface of InSb grown on GaAs and InP

Author

Tanaka, T. ; Washima, M. ; Sakaguchi, H.

Author_Institution

Adv. Res. Center, Hitachi Cable Ltd., Ibaraki, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

123

Lastpage

126

Abstract

Carrier accumulation at the heterointerface of InSb/substrate was investigated. Various surface indexes of the zinc-blende structure lattice were used as substrate for InSb growth and carrier concentration dependence on these indexes was recognized. This concentration increased in proportion to the dangling bond density, and the suppression of this accumulation was successfully performed by using a (111) interface, which had the lowest dangling bond density among all the surface indexes

Keywords

Hall effect; III-V semiconductors; carrier density; dangling bonds; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; GaAs; InP; InSb-GaAs; InSb-InP; carrier accumulation; carrier concentration; dangling bond density; epilayer/substrate interface; heterointerface; zinc-blende structure; Buffer layers; Charge carrier density; Gallium arsenide; Impurities; Indium phosphide; Lattices; Magnetic sensors; Pollution measurement; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712417

Filename

712417