• DocumentCode
    2817304
  • Title

    2.5 GB/s germanium gate photoMOSFET integrated to silicon photonics

  • Author

    Going, Ryan ; Loo, Jonathan ; Tsu-Jae King-Liu ; Wu, Ming C.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Berkeley, Berkeley, CA, USA
  • fYear
    2013
  • fDate
    28-29 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.
  • Keywords
    MOSFET; diffraction gratings; elemental semiconductors; germanium; integrated optoelectronics; optical couplers; optical waveguides; silicon; Ge-Si; bit rate 2.5 Gbit/s; germanium gate photoMOSFET; grating coupler; silicon photonic waveguides; wavelength 1550 nm; Germanium; Logic gates; Optical waveguides; Photonics; Silicon; Silicon-on-insulator; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
  • Conference_Location
    Berkeley, CA
  • Type

    conf

  • DOI
    10.1109/E3S.2013.6705885
  • Filename
    6705885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817304