DocumentCode :
2817304
Title :
2.5 GB/s germanium gate photoMOSFET integrated to silicon photonics
Author :
Going, Ryan ; Loo, Jonathan ; Tsu-Jae King-Liu ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2013
fDate :
28-29 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a monocrystalline 1×8 μm germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler operating at over 2.5 GB/s at 1550nm.
Keywords :
MOSFET; diffraction gratings; elemental semiconductors; germanium; integrated optoelectronics; optical couplers; optical waveguides; silicon; Ge-Si; bit rate 2.5 Gbit/s; germanium gate photoMOSFET; grating coupler; silicon photonic waveguides; wavelength 1550 nm; Germanium; Logic gates; Optical waveguides; Photonics; Silicon; Silicon-on-insulator; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
Type :
conf
DOI :
10.1109/E3S.2013.6705885
Filename :
6705885
Link To Document :
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