MOSFET Modeling Beyond 100nm Technology: Challenges and Perspectives

Evolution of compact models is reviewed. The development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced numbers of model parameters. It is demonstrated that the model accuracy for higher-order phenomena, which is prerequisite for accurate RF circuit simulation, can be achieved without any new model parameters in addition to those for describing the I-V characteristics. Remaining problems to be solved are also discussed.