Title :
TCAD Challenges in the Nanotechnology Era
Author :
Giles, Martin D.
Author_Institution :
Technology CAD, Design & Technology Solutions, Intel Corporation, RA3-254, 2501 NW 229th Avenue, Hillsboro, OR 95124, USA. E-mail: Martin. D.Giles@intel.com
Abstract :
TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlights emerging challenges in extending these capabilities into the nanotechnology era, and the opportunities for a hierarchical, physically-based modeling approach to impact the direction of nanotechnology development.
Keywords :
Annealing; CMOS technology; Design automation; Electronics industry; Ion implantation; Nanotechnology; Semiconductor device modeling; Semiconductor process modeling; Silicon; Standards development;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201460