DocumentCode :
2817334
Title :
TCAD Challenges in the Nanotechnology Era
Author :
Giles, Martin D.
Author_Institution :
Technology CAD, Design & Technology Solutions, Intel Corporation, RA3-254, 2501 NW 229th Avenue, Hillsboro, OR 95124, USA. E-mail: Martin. D.Giles@intel.com
fYear :
2005
fDate :
01-03 Sept. 2005
Firstpage :
7
Lastpage :
12
Abstract :
TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlights emerging challenges in extending these capabilities into the nanotechnology era, and the opportunities for a hierarchical, physically-based modeling approach to impact the direction of nanotechnology development.
Keywords :
Annealing; CMOS technology; Design automation; Electronics industry; Ion implantation; Nanotechnology; Semiconductor device modeling; Semiconductor process modeling; Silicon; Standards development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
Type :
conf
DOI :
10.1109/SISPAD.2005.201460
Filename :
1562012
Link To Document :
بازگشت