DocumentCode
2817404
Title
Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-κ gate stack materials
Author
Brown, A.R. ; Watling, J.R. ; Asenov, A. ; Bersuker, G. ; Zeitzoff, P.
Author_Institution
Dept. of Electronics and Electrical Engineering, Univ. of Glasgow, Glasgow G12 8LT, UK. E-mail: A.Brown@elec.gla.ac.uk
fYear
2005
fDate
2005
Firstpage
27
Lastpage
30
Abstract
Non-uniformity of the dielectric properties
Keywords
Crystallization; Dielectric devices; Dielectric materials; Fluctuations; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201464
Filename
1562016
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