Title :
Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-κ gate stack materials
Author :
Brown, A.R. ; Watling, J.R. ; Asenov, A. ; Bersuker, G. ; Zeitzoff, P.
Author_Institution :
Dept. of Electronics and Electrical Engineering, Univ. of Glasgow, Glasgow G12 8LT, UK. E-mail: A.Brown@elec.gla.ac.uk
Abstract :
Non-uniformity of the dielectric properties
Keywords :
Crystallization; Dielectric devices; Dielectric materials; Fluctuations; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201464
