DocumentCode
2817417
Title
Effect of Discrete Dopant Distribution on MOSFETs Scaling into the Future
Author
Ashizawa, Yoshio ; Oka, Hideki
Author_Institution
Fujitsu Laboratories Ltd. 50 Fuchigami, Akiruno, Tokyo, 197-0833, Japan. E-mail: ashizawa.yoshio@jp.fujitsu.com
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
31
Lastpage
34
Abstract
Device characteristics fluctuation due to discrete dopant distribution is one of the serious problems for future device scaling. We have evaluated the potential field on the substrate by applying 2D FFT. It is found that specific wave length range, 20 nm to 25 nm, is dominant to device characteristics. Moreover, if device size scales less than this specific wave length, there will be size effect caused by local potential fluctuation.
Keywords
Analytical models; Boron; Doping; Fluctuations; Impurities; Kinetic theory; Laboratories; MOSFETs; Response surface methodology; Simulated annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201465
Filename
1562017
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