Growth of atomically smooth ultra-thin InSb layers on GaAs substrates by molecular beam epitaxy

Author

Kanisawa, K. ; Yamaguchi, H. ; Hirayama, Y.

Author_Institution

NTT Basic Res. Labs., Kanagawa, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

131

Lastpage

134

Abstract

We successfully grew an atomically smooth 14.6% lattice-mismatched InSb layer on GaAs substrates under the Frank-van der Merwe (F-vdM) mode from the beginning of molecular beam epitaxy (MBE) by eliminating excess Sb adsorption. It is confirmed that the use of a (111)A substrate and an In template layer has an advantage in the enhancement of layer-by-layer InSb growth on a GaAs substrate. Characterization with scanning tunneling microscopy (STM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) clarified that we achieved a 1 nm height difference per 1 μm² area, which is comparable to that of a homoepitaxially grown GaAs surface

Keywords

III-V semiconductors; adsorption; atomic force microscopy; indium compounds; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; (111)A substrate; AFM; Frank-van der Merwe mode; GaAs; GaAs substrates; In template layer; InSb; MBE; STM; TEM; adsorption; molecular beam epitaxy; smooth ultra-thin InSb layers; Atomic beams; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Scanning electron microscopy; Substrates; Surface morphology; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712419

Filename

712419