Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine

Author

Pan, Z. ; Miyamoto, T. ; Schlenker, D. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

135

Lastpage

138

Abstract

A highly strained GaInNAs/GaAs quantum well (~+2%) was investigated by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy). The V/III ratio was found to be an important parameter, especially for GaInNAs growth using TBAs based on MOCVD, which strongly affected both the photoluminescence intensity and alloy compositions. Further, we proposed a post-growth annealing procedure to improve the quality of GaInNAs quantum wells. The photoluminescence intensity was improved by a factor of 10 after annealing at 640°C

Keywords

III-V semiconductors; MOCVD; annealing; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; InP; MOCVD; V/III ratio; alloy composition; dimethylhydrazine; photoluminescence intensity; post-growth annealing; quantum wells; tertiarybutylarsine; Annealing; Fiber lasers; Gallium arsenide; Indium; MOCVD; Nitrogen; Photoluminescence; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712420

Filename

712420