DocumentCode :
2817509
Title :
Commercially Designed and Manufactured SDRAM SEE Data
Author :
Hafer, Craig ; Von Thun, Matthew ; Leslie, Mike ; Sievert, Fred ; Jordan, Anthony
Author_Institution :
Aeroflex Colorado Springs, Colorado Springs, CO, USA
fYear :
2010
fDate :
20-23 July 2010
Firstpage :
5
Lastpage :
5
Abstract :
A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration. The Single Event Effects (SEE) performance is reported.
Keywords :
DRAM chips; multichip modules; MCM configuration; SDRAM SEE data; TID tolerant; single event effects; single event latchup immune; storage capacity 2.5 Gbit; storage capacity 3 Gbit; storage capacity 512 Mbit; Arrays; Ion beams; Ions; Radiation effects; SDRAM; Springs; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
ISSN :
2154-0519
Print_ISBN :
978-1-4244-8405-8
Type :
conf
DOI :
10.1109/REDW.2010.5619497
Filename :
5619497
Link To Document :
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