Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs

Author

Akturk, Akin ; Pennington, Gary ; Goldsman, Neil

Author_Institution

Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA. Email: akturka@glue.umd.edu

fYear

2005

fDate

01-03 Sept. 2005

Firstpage

51

Lastpage

54

Abstract

We offer a methodology for the numerical analysis of carbon nanotube (CNT) embedded silicon-on-insulator (SOI) MOSFETs. We examine CNT-SOI-MOSFETs that have a planar sheet of single-walled zig-zag semiconducting CNTs embedded along the channel direction, as shown in Fig. 1. To obtain device performance details including current-voltage characteristics, we employ a quantum based device solver [l] along with a Monte Carlo simulator [2]. Our calculated results show that replacing the silicon with CNTs in the channel may significantly improve device performance. The CNT-SOI-MOSFET with the smallest diameter tube may surpass other configurations of CNT-SOI-MOSFETs and conventional SOI-MOSFET in performance if fabricated successfully with the same channel thickness. In addition, under certain conditions the CNT-SOI-MOSFETs show negative differential resistance.

Keywords

Carbon nanotubes; Current-voltage characteristics; Dispersion; Effective mass; Electrons; Lattices; MOSFETs; Photonic band gap; Semiconductivity; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on

Print_ISBN

4-9902762-0-5

Type

conf

DOI

10.1109/SISPAD.2005.201470

Filename

1562022