Title :
Research on a New Real-Time Bad Block Replacement Algorithm
Author :
Qiu Qinglin ; Zhang Weigong ; Rong Jinye ; Wang Jian
Author_Institution :
Coll. of Inf. Eng., Capital Normal Univ., Beijing, China
Abstract :
The characters of FLASH memory are low-power, long-lived, deep storage density, adapted to strict environment, nonvolatile and the price is decreased, because of these reasons, it is wildly used. However, there are some inherent particularities: low writing speed, bad blocks exist when produced and could generated with using and so on. A new bad block management algorithm is proposed in this paper based on the application of NAND FLASH, and it improved the efficiency and ensured the data continuity.
Keywords :
flash memories; storage management; FLASH memory; NAND FLASH; bad block management; deep storage density; low writing speed; real-time bad block replacement; Data engineering; Educational institutions; Flash memory; Logic; Manufacturing; Nonvolatile memory; Read-write memory; Reliability; Solids; Writing;
Conference_Titel :
Computational Intelligence and Software Engineering, 2009. CiSE 2009. International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4507-3
Electronic_ISBN :
978-1-4244-4507-3
DOI :
10.1109/CISE.2009.5363372
