Title :
Nanoscale Erp Islands On Inp [001] Substrate Grown By Organometallic Vapor Phase Epitaxy
Author :
Bolotov, L. ; Tsuchiya, T. ; Ito, T. ; Fujiwara, Y. ; Takeda, Y. ; Nakamura, A.
Author_Institution :
Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan
Abstract :
We report an observation of nanoscale ErP islands formed on InP(001) during the Er-exposure in organometallic vapor phase epitaxial growth by means of atomic force (AFM) and scanning tunneling microscopies (STM). Different features of surface morphologies are observed depending on the growth temperature and ErP coverage. The generation of the misfit dislocation array along the [110] direction leads to anisotropic strain relaxation originating from anisotropy of the atomic bonds at the interface. Surface electronic structure of the ErP islands have been investigated by means of scanning tunneling spectroscopy (STS)
Keywords :
MOCVD; atomic force microscopy; dislocation arrays; erbium compounds; nanostructured materials; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; stress relaxation; surface states; surface structure; vapour phase epitaxial growth; AFM; ErP; ErP coverage; InP; OMVPE; STM; anisotropic strain relaxation; growth temperature; misfit dislocation array; nanoscale ErP islands; scanning tunneling spectroscopy; surface electronic structure; surface morphology; Anisotropic magnetoresistance; Atomic force microscopy; Atomic layer deposition; Capacitive sensors; Enterprise resource planning; Epitaxial growth; Substrates; Surface morphology; Temperature dependence; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba, Japan
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712422
