Temperature dependence of luminescence decay time of InP quantum disks

Author

Okuno, Tsuyoshi ; Ren, Hong-Wen ; Sugisaki, Mitsuru ; Nishi, Kenichi ; Sugou, Shigeo ; Masumoto, Yasuaki

Author_Institution

Inst. of Phys., Tsukuba Univ., Ibaraki, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

147

Lastpage

150

Abstract

We measured temperature dependence of luminescence decay time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below ~40 K, and is linear with temperature between ~40 and ~120 K. These two features in the two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disk-like shape of the InP dots; they have longer lateral widths than their heights, and thus have an intermediate character between zero-dimensions and two-dimensions

Keywords

III-V semiconductors; indium compounds; nanostructured materials; radiative lifetimes; self-assembly; semiconductor quantum dots; time resolved spectra; GaInP-GaAs; InP; luminescence decay time; quantum disks; radiative lifetime; self-assembled dots; temperature dependence; two-dimensional structures; zero-dimensional structures; Atomic measurements; Force measurement; Gallium arsenide; Indium phosphide; Luminescence; Optical surface waves; Pulse amplifiers; Quantum dots; Shape; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712423

Filename

712423