DocumentCode :
2817548
Title :
Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
Author :
Heidecker, Jason ; Allen, Gregory ; Sheldon, Douglas
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2010
fDate :
20-23 July 2010
Firstpage :
4
Lastpage :
4
Abstract :
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).
Keywords :
MRAM devices; MRAM; magnetoresistive random access memory; single event latchup; total ionizing dose; HDTV; Laboratories; Magnetic tunneling; Performance evaluation; Propulsion; Radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
ISSN :
2154-0519
Print_ISBN :
978-1-4244-8405-8
Type :
conf
DOI :
10.1109/REDW.2010.5619499
Filename :
5619499
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2817548
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