DocumentCode
2817567
Title
An Accurate Separation of Floating-Body and Self-Heating Effects for High-Frequency Characterization of SOI MOSFET´s
Author
Miura, Noriyuki ; Chiba, Tadashi ; Baba, Shunsuke
Author_Institution
Semiconductor R&D Division, Oki Electric Industry Co., Ltd. 550-1 Higashi-asakawa, Hachioji, Tokyo, 193-8550, Japan. Email: miura288@oki.com
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
63
Lastpage
66
Abstract
In this paper, we present an accurate high-frequency characterization of AC output conductance method to separate SOI specific floating-body effects (FBE) and self-heating effects (SHE) from DC I-V data. In DC measurement, the transistor TEG pattern dependence is essential in view of the SOI body potential, which is confirmed by 3-dimensional device simulation. In AC measurement, the power of small-signal is the most critical issue for removing the FBE and SHE components.
Keywords
Electrical resistance measurement; Electrodes; Frequency measurement; Immune system; MOSFET circuits; Parasitic capacitance; Power measurement; Radio frequency; Research and development; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201473
Filename
1562025
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