DocumentCode :
2817584
Title :
Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices
Author :
Fudeta, M. ; Asahi, H. ; Kim, S.J. ; Noh, J.H. ; Asami, K. ; Gonda, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
159
Lastpage :
162
Abstract :
Quantum dots (QDs) structures are self-formed by the growth of (GaP)n(InP)m short-period superlattices (SLs) sandwiched with InGaP barrier layers on GaAs(N11)A (N=2-5) substrates. Their lateral density is as high as 1011-1012 cm -2. Optical properties of multilayer quantum dots (MQDs)/InGaP multilayer structures are investigated by changing SL period (P) and InGaP barrier thickness (B). By decreasing P and B, PL peak broadening with temperature is much reduced. The multilayer quantum dots light emitting diode (MQDs-LED) shows excellent electroluminescence (EL) properties
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor superlattices; GaP-InP; GaP/InP short period superlattices; electroluminescence; lateral density; multilayer quantum dots light emitting diode; optical properties; photoluminescence; strain-induced quantum dots; Indium phosphide; Laser sintering; Light emitting diodes; Molecular beam epitaxial growth; Nonhomogeneous media; Optical superlattices; Quantum dot lasers; Quantum dots; Substrates; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712426
Filename :
712426
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2817584
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