DocumentCode :
2817593
Title :
Fast, area-efficient CMOS parity generation
Author :
Wu, Angus ; Meador, Jack
Author_Institution :
Dept. of Electr. & Comput. Eng., Washington State Univ., Pullman, WA, USA
fYear :
1990
fDate :
12-14 Aug 1990
Firstpage :
874
Abstract :
High-performance CMOS parity generator cells are described. Their enhanced speed is derived principally from a combination of exclusive-or and equivalence gate circuits. The circuits realize these logic functions in a single gate level using a combination of fully restoring and pass-transistor gate topology in a semirestoring configuration. The circuits are suitable for the gate forest realization. These parity generator cells neither consume DC power nor require complementary input signals, and are approximately three to five times faster than the conventional dual-level logic implementation. When these circuits are cascaded, the noise margin degradation problems typically associated with nonrestoring logic families are improved. The simplicity of this approach provides significant area savings compared to conventional implementations of various types
Keywords :
CMOS integrated circuits; integrated logic circuits; logic arrays; logic design; CMOS; area savings; area-efficient; enhanced speed; equivalence gate circuits; exclusive-NOR gates; exclusive-OR gates; fully restoring gates; gate forest realization; noise margin; parity generation; parity generator cells; pass-transistor gate; semirestoring configuration; single gate level; Circuit noise; Circuit topology; DC generators; Degradation; Error correction; Lifting equipment; Logic circuits; Logic functions; Power generation; Signal generators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
Type :
conf
DOI :
10.1109/MWSCAS.1990.140860
Filename :
140860
Link To Document :
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