DocumentCode
2817593
Title
Fast, area-efficient CMOS parity generation
Author
Wu, Angus ; Meador, Jack
Author_Institution
Dept. of Electr. & Comput. Eng., Washington State Univ., Pullman, WA, USA
fYear
1990
fDate
12-14 Aug 1990
Firstpage
874
Abstract
High-performance CMOS parity generator cells are described. Their enhanced speed is derived principally from a combination of exclusive-or and equivalence gate circuits. The circuits realize these logic functions in a single gate level using a combination of fully restoring and pass-transistor gate topology in a semirestoring configuration. The circuits are suitable for the gate forest realization. These parity generator cells neither consume DC power nor require complementary input signals, and are approximately three to five times faster than the conventional dual-level logic implementation. When these circuits are cascaded, the noise margin degradation problems typically associated with nonrestoring logic families are improved. The simplicity of this approach provides significant area savings compared to conventional implementations of various types
Keywords
CMOS integrated circuits; integrated logic circuits; logic arrays; logic design; CMOS; area savings; area-efficient; enhanced speed; equivalence gate circuits; exclusive-NOR gates; exclusive-OR gates; fully restoring gates; gate forest realization; noise margin; parity generation; parity generator cells; pass-transistor gate; semirestoring configuration; single gate level; Circuit noise; Circuit topology; DC generators; Degradation; Error correction; Lifting equipment; Logic circuits; Logic functions; Power generation; Signal generators;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location
Calgary, Alta.
Print_ISBN
0-7803-0081-5
Type
conf
DOI
10.1109/MWSCAS.1990.140860
Filename
140860
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