Title :
Total Dose and Single Event Testing of a Hardened Point of Load Regulator
Author :
van Vonno, N.W. ; Pearce, L.G. ; Gill, J.S. ; Satterfield, H.W. ; Thomson, E.T. ; Fobes, T.E. ; Williams, A.P. ; Chesley, P.J.
Author_Institution :
Intersil Corp., Melbourne, FL, USA
Abstract :
We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.
Keywords :
BiCMOS integrated circuits; load regulation; power MOSFET; voltage regulators; ISL70001SRH hardened point of load; dose event testing; integrated power MOSFET switching transistors; load regulator; single event testing; single-event effects testing; submicron BiCMOS process; voltage regulator; Ions; Logic gates; Power MOSFET; Radiation effects; Testing; Voltage control;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619501
