Title :
Effect of phosphine plasma on suppression of plasma-induced defects in InGaAs
Author :
Sugino, Takashi ; Miyazaki, Takashi ; Matsuda, Koichiro ; Shirafuji, Junji
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Electron traps at and near the surface of InGaAs treated with Ar plasma are investigated by isothermal capacitance transient spectroscopy measurements. Two electron traps are detected and designated as E1 and E2. The E1 and E2 traps are located at 0.35 eV and 0.48 eV below the conduction band edge, respectively. In the case when InGaAs is treated with PH3-added Ar plasma, a significant reduction in the densities of both E1 and E2 traps occurs in comparison with those of Ar-plasma-treated InGaAs. It is found that phosphorus atoms are effective in suppressing generation of electron traps in InGaAs
Keywords :
III-V semiconductors; deep level transient spectroscopy; electron traps; gallium arsenide; indium compounds; plasma materials processing; surface states; surface treatment; Ar-PH3; E1 traps; E2 traps; InGaAs; PH3; PH3-added Ar plasma; electron traps; isothermal capacitance transient spectroscopy; phosphine plasma; plasma-induced defect suppression; Argon; Electron traps; Indium gallium arsenide; Optical surface waves; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Spectroscopy; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712429
